Soft error

In electronics and computing, an error is a signal or datum which is wrong. Errors may be caused by a defect, usually understood either to be a mistake in design or construction, or a broken component. A soft error is also a signal or datum which is wrong, but is not assumed to imply such a mistake or breakage. After observing a soft error, there is no implication that the system is any less reliable than before.

If detected, a soft error may be corrected by rewriting correct data in place of erroneous data. Highly reliable systems use error correction to correct soft errors on the fly. However, in many systems, it may be impossible to determine the correct data, or even to discover that an error is present at all. In addition, before the correction can occur, the system may have crashed, in which case the recovery procedure must include a reboot.

Soft errors involve changes to data — the electrons in a storage circuit, for example — but not changes to the physical circuit itself, the atoms. If the data is rewritten, the circuit will be perfect again.

Soft errors can occur on transmission lines, in digital logic, analog circuits, magnetic storage, and elsewhere, but are most commonly known in semiconductor storage.

Soft errors should not be confused with software programming errors.

Critical charge

Whether a circuit experiences a soft error depends on the energy of the incoming particle, the geometry of the impact, the location of the strike, and the design of the logic circuit. Logic circuits with higher capacitance and higher logic voltages are less likely to suffer an error. This combination of capacitance and voltage is described by the critical charge parameter, Q_crit, the minimum electron charge disturbance needed to change the logic level. A higher Q_crit means fewer soft errors. Unfortunately, a higher Q_crit also means a slower logic gate and a higher power dissipation. Reduction in chip feature size and supply voltage, desirable for many reasons, decreases Q_crit. Thus, the importance of soft errors increases as chip technology advances.

In a logic circuit, Q_crit is defined as the minimum amount of induced charge required at a circuit node to cause a voltage pulse to propagate from that node to the output and be of sufficient duration and magnitude to be reliably latched. Since a logic circuit contains many nodes that may be struck, and each node may be of unique capacitance and distance from output, Q_crit is typically characterized on a per-node basis.

Causes of soft errors

Chapter 1 of Shubu Mukherjee's recent book, "Architecture Design for Soft Errors," has a good introduction to the sources of soft errors that are affecting computer chips today. See external links and references below for details on the book and related articles.

Alpha Particles from Package Decay

Soft errors became widely known with the introduction of dynamic RAM in the 1970s. In these early devices, chip packaging materials contained small amounts of radioactive contaminants. Very low decay rates are needed to avoid excess soft errors, and chip companies have occasionally suffered problems with contamination ever since. It is extremely hard to maintain the material purity needed. Controlling alpha particle emission rates for critical packaging materials to less than a level of 0.001 counts hour^-1 cm^-2 (cph/cm²) is required for reliable performance of most circuits. For comparison, the count rate of a typical shoe's sole is between 0.1 and 10 cph/cm².

Package radioactive decay usually causes a soft error by alpha particle emission. The positively charged alpha particle travels through the semiconductor and disturbs the distribution of electrons there. If the disturbance is large enough, a digital signal can change from a 0 to a 1 or vice versa. In combinational logic, this effect is transient, perhaps lasting a fraction of a nanosecond, and this has led to the challenge of soft errors in combinational logic mostly going unnoticed. In logic RAM and latches, even this transient upset can become stored for an indefinite time, to be read out later. Thus, designers are usually much more aware of the problem in storage circuits.

Cosmic rays creating energetic neutrons and protons

Once the electronics industry had determined how to control package contaminants, it became clear that other causes were also at work. James F. Ziegler led a program of work at IBM which culminated in the publication of a number of papers (Ziegler and Lanford, 1979) demonstrating that cosmic rays also could cause soft errors. Indeed, in modern devices, cosmic rays may be the predominant cause. Although the primary particle of the cosmic ray does not generally reach the earth's surface it creates a shower of energetic secondary particles. At the earth's surface approximately 95% of the particles capable of causing soft errors are energetic neutrons with the remainder composed of protons and pions (Ziegler, 1996).J.F. Ziegler, Terrestrial cosmic rays, IBM Journal of Research and Development, Vol. 40, no. 1, pp. 19-40, Jan 1996.] This flux of energetic neutrons is typically referred to as "cosmic rays" in the soft error literature. Neutrons are uncharged and cannot disturb a circuit on their own, but undergo neutron capture by the nucleus of an atom in a chip. This process may result in the production of charged secondaries, such as alpha particles and oxygen nuclei, which can then cause soft errors.

Cosmic ray flux depends on altitude. For the common reference location of 40.7N, 74W at 0 meters (sea level in New York City, NY, USA) the flux is approximately 14 neutrons / cm²/hour. Burying a system in a cave reduces the rate of cosmic-ray induced soft errors to a negligible level. In the lower levels of the atmosphere, the flux increases by a factor of about 2.2 for every 1000 m (1.3 for every 1000 ft) increase in altitude above sea level. Computers operated on top of mountains experience an order of magnitude higher rate of soft errors compared to sea level. The rate of upsets in aircraft may be more than 300 times the sea level upset rate. This is in contrast to package decay induced soft errors, which do not change with location. A model of the energetic neutron flux is presented in (Gordon & Goldhagen, 2004). [Gordon, Goldhagen, "Measurement of the Flux and Energy Spectrum of Cosmic-Ray Induced Neutrons on the Ground, IEEE Trans on Nuclear Science, vol. 51, no. 6, pp. 3427-34, Dec. 2004.] . An online calculator for this model is available at [http://www.seutest.com www.seutest.com] .

The average rate of cosmic-ray soft errors is "inversely" proportional to sunspot activity. That is, the average number of cosmic-ray soft errors decreases during the active portion of the sunspot cycle and increases during the quiet portion. This counterintuitive result occurs for two reasons. The sun does not generally produce cosmic ray particles with energy above 1 GeV that are capable of penetrating to the earth's upper atmosphere and creating particle showers, so the changes in the solar flux do not directly influence the number of errors. Further, the increase in the solar flux during an active sun period does have the effect of reshaping the earth's magnetic field providing some additional shielding against higher energy cosmic rays, resulting in a decrease in the number of particles creating showers. The effect is fairly small in any case resulting in a +/- 7% modulation of the energetic neutron flux in New York City. Other locations are similarly affected. Energetic neutrons produced by cosmic rays may lose most of their kinetic energy and reach thermal equilibrium with their surroundings as they are scattered by materials. The resulting neutrons are simply referred to as thermal neutrons and have an average kinetic energy of about 25 millielectron-volts at 25°C. Thermal neutrons are also produced by environmental radiation sources such as the decay of naturally occurring uranium or thorium. The thermal neutron flux from sources other than cosmic-ray showers may still be noticeable in an underground location and an important contributor to soft errors for some circuits.

Thermal neutrons

Neutrons that have lost kinetic energy until they are in thermal equilibrium with their surroundings are an important cause of soft errors for some circuits. At low energies many neutron capture reactions become much more probable and result in fission of certain materials creating charged secondaries as fission byproducts. For some circuits the capture of a thermal neutron by the nucleus of the B-10 isotope of boron is particularly important. This nuclear reaction is an efficient producer of an alpha particle, Li-7 nucleus and gamma ray. Either of the charged particles (alpha or Li-7) may cause a soft error if produced in very close proximity, approximately 5 micrometers, to a critical circuit node. The capture cross section for B-11 is 6 orders of magnitude smaller and does not contribute to soft errors (Baumann "et al", 1995) [R. Baumann, T. Hossain, S. Murata, H. Kitagawa, Boron compounds as a dominant source of alpha particles in semiconductor devices, IRPS Proceedings, pp. 297-302, 1995.]

Boron has been used in BPSG, the insulator in the interconnection layers of integrated circuits, particularly in the lowest one. The inclusion of boron lowers the melt temperature of the glass providing better reflow and planarization characteristics. In this application the glass is formulated with a boron content of 4% to 5% by weight. Naturally occurring boron is comprised of 20% B-10 with the remainder the B-11 isotope. Soft errors are caused by the high level of B-10 in this critical lower layer of some older integrated circuit processes. Boron-11, used at low concentrations as a p-type dopant, does not contribute to soft errors. Integrated circuit manufacturers eliminated borated dielectrics by the 150 nm process node, largely due to this problem.

In critical designs, depleted boron—consisting almost entirely of Boron-11 is used, to avoid this effect and therefore to reduce the soft error rate. Boron-11 is a by-product of the nuclear industry.

For applications in medical electronic devices this soft error mechanism may be extremely important. Neutrons are produced during high energy cancer radiation therapy using photon beam energies above 10 MV. These neutrons are moderated as they are scattered from the equipment and walls in the treatment room resulting in a thermal neutron flux that is about 40x10⁶ higher than the normal environmental neutron flux. This high thermal neutron flux will generally result in a very high rate of soft errors and consequent circuit upset (Wilkinson "et al", 2005) [J. Wilkinson, C. Bounds, T. Brown, B.J. Gerbi, J. Peltier, Cancer radiotherapy equipment as a cause of soft errors in electronic equipment, IEEE Trans Device and Materials Reliability, Vol. 5, No. 3, pp. 449-51, Apr. 2005] , (Franco "et al", 2005) [Franco, L., Gómez, F., Iglesias, A., Pardo, J., Pazos, A., Pena, J., Zapata, M., SEUs on commercial SRAM induced by low energy neutrons produced at a clinical linac facility, RADECS Proceedings, Sept. 2005] .

Other causes

Soft errors can also be caused by random noise or signal integrity problems, such as inductive or capacitive crosstalk. However, in general, these sources represent a small contribution to the overall soft error rate when compared to radiation effects.

Designing around soft errors

Soft error mitigation

A designer can attempt to minimise the rate of soft errors by judicious device design, choosing the right semiconductor, package and substrate materials, and the right device geometry. Often, however, this is limited by the need to reduce device size and voltage, to increase operating speed and to reduce power dissipation. The susceptibility of devices to upsets is described in the industry using the JEDEC JESD-89 standard.

One technique that can be used to reduce the soft error rate in digital circuits is called radiation hardening. This involves increasing thecapacitance at selected circuit nodes in order to increase its effective Q_crit value. This reduces the range of particle energiesto which the logic value of the node can be upset. Radiation hardening is often accomplished by increasing the size of transistors who sharea drain/source region at the node. Since the area and power overhead of radiation hardening can be restrictive to design, the technique is often applied selectively to nodes which are predicted to have the highest probability of resulting in soft errors if struck. Tools and models that canpredict which nodes are most vulnerable are the subject of past and current research in the area of soft errors.

Correcting soft errors

Designers can choose to accept that soft errors will occur, and design systems with appropriate error detection and correction to recover gracefully. Typically, a semiconductor memory design might use forward error correction, incorporating redundant data into each word to create an error correcting code. Alternatively, roll-back error correction can be used, detecting the soft error with an error-detecting code such as parity, and rewriting correct data from another source. This technique is often used for write-through cache memories.

Soft errors in logic circuits are sometimes detected and corrected using the techniques of fault tolerant design. These often include the use of redundant circuitry or computation of data, and typically come at the cost of circuit area, decreased performance, and/or higher power consumption. The concept of triple modular redundancy (TMR) can be employed to ensure very high soft-error reliability in logic circuits. In this technique, three identical copies of a circuit compute on the same data in parallel and outputs are fed into majority voting logic, returning the value that occurred in at least two of three cases. In this way, the failure of one circuit due to soft error is discarded assuming the other two circuits operated correctly. In practice, however, few designers can afford the greater than 200% circuit area and power overhead required, so it is usually only selectively applied. Another common concept to correct soft errors in logic circuits is temporal (or time) redundancy, in which one circuit operates on the same data multiple times and compares subsequent evaluations for consistency. This approach, however, often incurs performance overhead, area overhead (if copies of latches are used to store data), and power overhead, though is considerably more area-efficient than modular redundancy.

Traditionally, DRAM has had the most attention in the quest to reduce, or work-around soft errors, due to the fact that DRAM has comprised the majority-share of susceptible device surface area in desktop, and server computer systems (ref. the prevalence of ECC RAM in server computers). Hard figures for DRAM susceptibility are hard to come by, and vary considerably across designs, fabrication processes, and manufacturers. 1980s technology 256 kilobit DRAMS could have clusters of five or six bits flip from a single alpha particle. Modern DRAMs have much smaller feature sizes, so the deposition of a similar amount of charge could easily cause many more bits to flip.

The design of error detection and correction circuits is helped by the fact that soft errors usually are localised to a very small area of a chip. Usually, only one cell of a memory is affected, although high energy events can cause a multi-cell upset. Conventional memory layout usually places one bit of many different correction words adjacent on a chip. So, even a "multi-cell upset" leads to only a number of separate "single-bit upsets" in multiple correction words, rather than a "multi-bit upset" in a single correction word. So, an error correcting code needs only to cope with a single bit in error in each correction word in order to cope with all likely soft errors. The term 'multi-cell' is used for upsets affecting multiple cells of a memory, whatever correction words those cells happen to fall in. 'Multi-bit' is used when multiple bits in a single correction word are in error.

oft errors in combinational logic

The three natural masking effects in combinational logic that determine whethera single event upset (SEU) will propagate to become a soft error are electrical masking, logical masking, and temporal (or timing-window) masking. An SEU is "logically masked" if itspropagation is blocked from reaching an output latch because off-path gateinputs prevent a logical transition of that gate's output. An SEU is "electrically masked" if the signal is attenuated by the electrical properties ofgates on its propagation path such that the resulting pulse is of insufficient magnitude to bereliably latched. An SEU is "temporally masked" if the erroneous pulse reachesan output latch, but it does occur close enough to when the latch is actually triggered to hold.

If all three masking effects fail to occur, the propagated pulse becomes latched and the output of the logic circuit will be an erroneous value. In the context of circuit operation, this erroneous output value may be considered a soft error event. However, from a microarchitectural-level standpoint, the affected result may not change the output of the currently-executing program. For instance, the erroneous data could be overwritten before use, masked in subsequent logic operations, or simply never be used. If erroneous data does not affect the output of a program, it is considered to be an example of "microarchitectural masking".

Soft error rate

Soft error rate (SER) is the rate at which a device or system encounters or is predicted to encounter soft errors. It is typically expressed as either number of failures-in-time (FIT), or mean-time-between-failures (MTBF). The unit adopted for quantifying failures in time is called FIT, equivalent to 1 error per billion hours of device operation. MTBF is usually given in years of device operation. To put it in perspective, 1 year MTBF is equal to approximately 114,077 FIT.

While many electronic systems have an MTBF that exceeds the expected lifetime of the circuit, the SER may still be unacceptable to the manufacturer or customer. For instance, many failures per million circuits due to soft errors can be expected in the field if the system does not have adequate soft error protection. The failure of even a few products in the field, particularly if catastrophic, can tarnish the reputation of the product and company that designed it. Also, in safety- or cost-critical applications where the cost of system failure far outweighs the cost of the system itself, a 1% chance of soft error failure per lifetime may be too high to be acceptable to the customer. Therefore, it is advantageous to design for low SER when manufacturing a system in high-volume or requiring extremely high reliability.

See also

* Single event upset
* Radiation hardening

External links

* [http://www.amazon.com/Architecture-Design-Errors-Shubu-Mukherjee/dp/0123695295/ref=pd_bbs_sr_1?ie=UTF8&s=books&qid=1221659070&sr=8-1 Book on "Architecture Design for Soft Errors" by Shubu Mukherjee, published by Elsevier, Inc.] Book review by Max Baron of Microprocessor Report (May 27, 2008), “Dr. Shubu Mukherjee’s book is a welcome surprise: books by architecture leaders in major companies are few and far between.Written from the viewpoint of a working engineer, the book describes sources of soft errors and solutions involving device, logic, and architecture design to reduce the effects of soft errors”
* [http://www.tezzaron.com/about/papers/soft_errors_1_1_secure.pdf Soft Errors in Electronic Memory - A White Paper] - A good summary paper with many references - Tezzaron Jan 2004
* [http://www-1.ibm.com/servers/eserver/pseries/campaigns/chipkill.pdf Benefits of Chipkill-Correct ECC for PC Server Main Memory] - A 1997 discussion of SDRAM reliability - some interesting information on "soft errors" from cosmic rays, especially with respect to Error-correcting code schemes
* [http://www.edn.com/article/CA454636.html Soft errors' impact on system reliability] - Ritesh Mastipuram and Edwin C Wee, Cypress Semiconductor, 2004
* [http://www.nepp.nasa.gov/DocUploads/40D7D6C9-D5AA-40FC-829DC2F6A71B02E9/Scal-00.pdf Scaling and Technology Issues for Soft Error Rates] - A Johnston - 4th Annual Research Conference on Reliability Stanford University, October 2000
* [http://www.rcnp.osaka-u.ac.jp/~annurep/2001/genkou/sec3/kobayashi.pdf Evaluation of LSI Soft Errors Induced by Terrestrial Cosmic rays and Alpha Particles] - H. Kobayashi, K. Shiraishi, H. Tsuchiya, H. Usuki (all of Sony), and Y. Nagai, K. Takahisa (Osaka University), 2001.
* [http://www.selse.org/ SELSE Workshop Website] - Website for the workshop on the System Effects of Logic Soft Errors
* [http://www.iroctech.com iRoC Technologies] - A company dedicated to Soft Error solutions and products
* [http://www.nucletudes.com EADS Nucletudes] - A company dedicated to hardening system for space applications

References

*Ziegler, J. F. and W. A. Lanford, "Effect of Cosmic Rays on Computer Memories", "Science", 206, 776 (1979).

*Mukherjee, S, "Architecture Design for Soft Errors," Elsevier, Inc., Feb. 2008.

*Mukherjee, S, "Computer Glitches from Soft Errors: A Problem with Multiple Solutions," Microprocessor Report, May 19, 2008.